maximum ratings and thermal characteristics (t c = 25? unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current (1) i d 70 a pulsed drain current i dm 200 maximum power dissipation t c = 25? p d 62.5 w t c = 100? 25 operating junction and storage temperature range t j , t stg 55 to 150 ? lead temperature (1/8?from case for 5 sec.) t l 275 ? junction-to-case thermal resistance r jc 2.0 ?/w junction-to-ambient thermal resistance (2) r ja 40 ?/w notes: (1) maximum dc current limited by the package (2) 1-in 2 2oz. cu pcb mounted GFB70N03 n-channel enhancement-mode mosfet v ds 30v r ds(on) 8 m ? i d 70a 5/16/01 features ?advanced trench process technology ?high density cell design for ultra low on-resistance ?specially designed for low voltage dc/dc converters ?fast switching for high efficiency mechanical data case: jedec to-263 molded plastic body terminals: leads solderable per mil-std-750, method 2026 high temperature soldering guaranteed: 250?/10 seconds at terminals mounting position: any weight: 1.3g 0.380 (9.65) 0.420 (10.67) 0.320 (8.13) 0.360 (9.14) 0.575 (14.60) 0.625 (15.88) 0.21 (5.33) min. d -t- seating plate 0.027 (0.686) 0.037 (0.940) 0.096 (2.43) 0.102 (2.59) gds pin 0.160 (4.06) 0.190 (4.83) 0.045 (1.14) 0.055 (1.40) 0.120 (3.05) 0.155 (3.94) 0.055 (1.39) 0.066 (1.68) 0.014 (0.35) 0.020 (0.51) 0.100 (2.54) 0.130 (3.30) g d s to-263ab dimensions in inches and (millimeters) 0.08 (2.032) 0.24 (6.096) 0.42 (10.66) 0.63 (17.02) 0.12 (3.05) 0.33 (8.38) mounting pad layout t rench g en f et
electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage bv dss v gs = 0v, i d = 250 a30 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 3.0 v gate-body leakage i gss v ds = 0v, v gs = 20v 100 na zero gate voltage drain current i dss v ds = 30v, v gs = 0v 1 a on-state drain current (1) i d(on) v ds 5v, v gs = 10v 70 a drain-source on-state resistance (1) r ds(on) v gs = 10v, i d = 35a 68 m ? v gs = 4.5v, i d = 30a 911 forward transconductance (1) g fs v ds = 15v, i d = 35a 61 s dynamic total gate charge q g v ds =15v, v gs =5v, i d =35a 34 48 63 95 gate-source charge q gs v ds = 15v, v gs = 10v 11 nc gate-drain charge q gd i d = 35a 11 turn-on delay time t d(on) 914 rise time t r v dd = 15v, r l = 15 ? 914 turn-off delay time t d(off) i d ? 1a, v gen = 10v 100 167 ns fall time t f r g = 6 ? 31 62 input capacitance c iss v gs = 0v 3400 output capacitance c oss v ds = 15v 618 pf reverse transfer capacitance c rss f = 1.0mh z 300 source-drain diode max diode forward current i s 35 a diode forward voltage (1) v sd i s = 35a, v gs = 0v 0.9 1.3 v note: (1) pulse test; pulse width 300 s, duty cycle 2% GFB70N03 n-channel enhancement-mode mosfet g d s v in v dd v gen r g r d v out dut input, v in t d(on) output, v out t on t r t d(off) t off t f inverted 90% 10% 10% 90 % 50% 50% 10% 90% pulse width switching test circuit switching waveforms
0 10 20 30 50 60 70 0 0.5 1 1.5 2 2.5 fig. 1 ?output characteristics 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0 20 40 60 80 100 fig. 4 ?on-resistance vs. drain current 0 10 20 40 30 50 70 60 12345 fig. 2 ?transfer characteristics 40 v gs = 2.5v 0.8 0.6 1.4 1.6 1.2 1 -- 50 -- 25 25 50 75 100 125 150 0 fig. 5 ?on-resistance vs. junction temperature v gs = 10v i d = 35a v gs = 4.5v 25 c v gs = 10v t j = 125 c --55 c 3.0v 3.5v 6.0v 4.0v v ds = 10v 10v 0.6 1.4 1.2 1.6 1.8 0.8 1 -- 50 -- 25 25 50 75 100 125 150 0 fig. 3 ?threshold voltage vs. temperature i d = 250 a i d -- drain source current (a) v ds -- drain-to-source voltage (v) r ds(on) -- on-resistance ( ? ) i d -- drain current (a) i d -- drain current (a) v gs -- gate-to-source voltage (v) r ds(on) -- on-resistance (normalized) t j -- junction temperature ( c) v gs(th) -- threshold voltage (v) t j -- junction temperature ( c) 4.5v ratings and characteristic curves (t a = 25 c unless otherwise noted) GFB70N03 n-channel enhancement-mode mosfet
0 500 1000 1500 2000 2500 3000 3500 4000 4500 0 5 10 15 30 20 25 fig. 8 capacitance c iss c rss c oss f = 1mh z v gs = 0v 0 2 4 6 8 10 01020 40 30 fig. 7 gate charge 50 60 70 v ds = 15v i d = 35a 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 t j = 125 c fig. 9 source-drain diode forward voltage 25 c --55 c v gs = 0v i s -- source current (a) v sd -- source-to-drain voltage (v) q g -- gate charge (nc) v gs -- gate-to-source voltage (v) c -- capacitance (pf) v ds -- drain-to-source voltage (v) 0 0.005 0.01 0.02 0.015 0.025 0.03 246810 fig. 6 on-resistance vs. gate-to-source voltage i d = 35a t j = 125 c 25 c r ds(on) -- on-resistance ( ? ) v gs -- gate-to-source voltage (v) ratings and characteristic curves (t a = 25 c unless otherwise noted) GFB70N03 n-channel enhancement-mode mosfet
36 35 37 39 40 38 -- 50 -- 25 25 50 75 100 125 0 fig. 10 breakdown voltage vs. junction temperature 150 i d = 250 a bv dss -- breakdown voltage (v) t j -- junction temperature ( c) fig. 13 maximum safe operating area 0.0001 0.001 0.01 0.01 0.1 0.1 1 1 10 i d -- drain current (a) v ds -- drain-source voltage (v) fig. 11 thermal impedance r ja (norm) -- normalized thermal impedance pulse duration (sec.) single pulse 0.001 0.0001 0.01 0.1 0 0.1 1 1 10 100 1000 10 100 200 400 600 800 1000 110 fig. 12 power vs. pulse duration power (w) pulse duration (sec.) single pulse r jc = 2.0 c/w t c = 25 c v gs = 10v single pulse r jc = 2.0 c/w t c = 25 c r ds(on) limit 100 s 1ms 10ms dc d = 0.5 0.2 0.1 t 1 t 2 p dm 1. duty cycle, d = t 1 /t 2 2. r jc (t) = r jc(norm) *r jc 3. r jc = 2.0 c/w 4. t j - t c = p dm * r jc (t) 0.05 100ms ratings and characteristic curves (t a = 25 c unless otherwise noted) GFB70N03 n-channel enhancement-mode mosfet
|
